AM5 - Hynix M-die Timings
Reference for Ryzen AM5 with Hynix M-die 16 GB modules PDF exports below, plus a folded text copy of the preset tables and glossary.
PDF reference
Version 0.2
R5-D5-H16M · AM5 · Hynix M-die (16 Gb) · v0.2
Version 0.1
Ryzen AM5 · Hynix M-die (16 Gb) · v0.1 (older revision)
Text quick reference
Same data as the sheets above, collapsed by default open a block to copy values. XMP/EXPO means use the kit’s profile for that cell.
DDR5-6000 · fallback / “easy” / BZ lazy
| Setting | Fallback | Easy | BZ lazy |
|---|---|---|---|
| UCLK : MCLK | 1:1 | 1:1 | 1:1 |
| MCLK | 3000 | 3000 | 3000 |
| UCLK | 3000 | 3000 | 3000 |
| FCLK | 2000 | 2000 | 2133 |
| VSOC | 1.25 | 1.25 | 1.25 |
| DRAM VDD | 1.35 | auto | 1.43 |
| DRAM VDDQ | auto | auto | auto |
| VDDIO | auto | auto | auto |
| VDDP | 0.95 | 0.95 | 0.95 |
| tCL | 32 | XMP/EXPO | 30 |
| tRCDWR | 38 | XMP/EXPO | 16 |
| tRCDRD | 38 | XMP/EXPO | 36 |
| tRP | 38 | XMP/EXPO | 36 |
| tRAS | 126 | 126 | 126 |
| tRC | 60 | 60 | 60 |
| tWR | 48 | 48 | 48 |
| tRFC | 512 | 512 | 512 |
| tRFC2 | not used | not used | not used |
| tRFCSB | not used | not used | not used |
| tREFI | 40000 | 50000 | 65535 |
| tRTP | 16 | 16 | 16 |
| tRRDL | 8 | 8 | 8 |
| tRRDS | 8 | 8 | 4 |
| tFAW | 32 | 32 | 20 |
| tWTRL | 16 | 16 | 16 |
| tWTRS | 6 | 4 | 4 |
| tRDRDSCL | 4 | 4 | 4 |
| tRDRDSC | 1 | 1 | 1 |
| tRDRDSD | 6 | 6 | 6 |
| tRDRDDD | 6 | 6 | 6 |
| tWRWRSCL | 4 | 2 | 2 |
| tWRWRSC | 1 | 1 | 1 |
| tWRWRSD | 8 | 8 | 8 |
| tWRWRDD | 8 | 8 | 8 |
| tWRRD | 4 | 4 | 4 |
| tRDWR | 16 | 16 | 16 |
| Nitro RX Data | auto | auto | 1 |
| Nitro TX Data | auto | auto | 2 |
| Nitro Control Line | auto | auto | 0 |
- tRCDWR: if the board has no tRCDWR, use tRCDRD only.
- tRDRDSD / tRDRDDD / tWRWRSD / tWRWRDD: multi-rank setups only.
- tREFI 65535: RAM fan recommended.
DDR5-6200 · fallback / “easy” / BZ lazy
UMC lottery (Ryzen 9000)
On some CPUs the UMC will not run 3100 MHz (1:1) even with ~1.3 V VSOC, so DDR5-6200 1:1 may be impossible. Prefer 1:1 @ 6000 or 2:1 @ 7600+ if that happens.
| Setting | Fallback | Easy | BZ lazy |
|---|---|---|---|
| UCLK : MCLK | 1:1 | 1:1 | 1:1 |
| MCLK | 3100 | 3100 | 3100 |
| UCLK | 3100 | 3100 | 3100 |
| FCLK | 2066 | 2066 | 2066 |
| VSOC | 1.3 | 1.3 | 1.3 |
| DRAM VDD | 1.35 | auto | 1.43 |
| DRAM VDDQ | auto | auto | auto |
| VDDIO | auto | auto | auto |
| VDDP | 0.95 | 0.95 | 0.95 |
| tCL | 34 | XMP/EXPO | 32 |
| tRCDWR | 40 | XMP/EXPO | 16 |
| tRCDRD | 40 | XMP/EXPO | 37 |
| tRP | 40 | XMP/EXPO | 37 |
| tRAS | 126 | 126 | 126 |
| tRC | 62 | 62 | 62 |
| tWR | 48 | 48 | 48 |
| tRFC | 544 | 512 | 512 |
| tRFC2 | not used | not used | not used |
| tRFCSB | not used | not used | not used |
| tREFI | 40000 | 50000 | 65535 |
| tRTP | 16 | 16 | 16 |
| tRRDL | 8 | 8 | 8 |
| tRRDS | 8 | 8 | 4 |
| tFAW | 32 | 32 | 20 |
| tWTRL | 16 | 16 | 16 |
| tWTRS | 6 | 4 | 4 |
| tRDRDSCL | 6 | 4 | 4 |
| tRDRDSC | 1 | 1 | 1 |
| tRDRDSD | 6 | 6 | 6 |
| tRDRDDD | 6 | 6 | 6 |
| tWRWRSCL | 6 | 2 | 2 |
| tWRWRSC | 1 | 1 | 1 |
| tWRWRSD | 8 | 8 | 8 |
| tWRWRDD | 8 | 8 | 8 |
| tWRRD | 6 | 4 | 4 |
| tRDWR | 18 | 16 | 16 |
| Nitro RX Data | auto | 1 | 1 |
| Nitro TX Data | auto | 3 | 2 |
| Nitro Control Line | auto | 1 | 0 |
- tRCDWR: if the board has no tRCDWR, use tRCDRD only.
- FCLK: if stable, 2166 or 2200 can be a bit faster than 2066.
- Multi-rank-only timings and tREFI 65535 fan note same as DDR5-6000 block.
DDR5-6400 · fallback / “easy” / BZ lazy
UMC ceiling (Ryzen 9000)
Many Ryzen 9000 CPUs will not do 3200 MHz UCLK/MCLK (1:1) even at ~1.3 V VSOC, so DDR5-6400 1:1 may be impossible. Prefer 1:1 @ 6200 or 2:1 @ 7600+.
| Setting | Fallback | Easy | BZ lazy |
|---|---|---|---|
| UCLK : MCLK | 1:1 | 1:1 | 1:1 |
| MCLK | 3200 | 3200 | 3200 |
| UCLK | 3200 | 3200 | 3200 |
| FCLK | 2100 | 2133 | 2133 |
| VSOC | 1.3 | 1.3 | 1.3 |
| DRAM VDD | 1.35 | auto | 1.43 |
| DRAM VDDQ | auto | auto | auto |
| VDDIO | auto | auto | auto |
| VDDP | 0.95 | 0.95 | 0.95 |
| tCL | 34 | XMP/EXPO | 32 |
| tRCDWR | 40 | XMP/EXPO | 16 |
| tRCDRD | 40 | XMP/EXPO | 38 |
| tRP | 40 | XMP/EXPO | 38 |
| tRAS | 126 | 126 | 126 |
| tRC | 64 | 64 | 64 |
| tWR | 48 | 48 | 48 |
| tRFC | 544 | 544 | 544 |
| tRFC2 | not used | not used | not used |
| tRFCSB | not used | not used | not used |
| tREFI | 40000 | 50000 | 65535 |
| tRTP | 16 | 16 | 16 |
| tRRDL | 10 | 8 | 8 |
| tRRDS | 8 | 8 | 4 |
| tFAW | 32 | 32 | 20 |
| tWTRL | 16 | 16 | 16 |
| tWTRS | 6 | 4 | 4 |
| tRDRDSCL | 6 | 6 | 4 |
| tRDRDSC | 1 | 1 | 1 |
| tRDRDSD | 6 | 6 | 6 |
| tRDRDDD | 6 | 6 | 6 |
| tWRWRSCL | 6 | 2 | 2 |
| tWRWRSC | 1 | 1 | 1 |
| tWRWRSD | 8 | 8 | 8 |
| tWRWRDD | 8 | 8 | 8 |
| tWRRD | 6 | 4 | 4 |
| tRDWR | 18 | 16 | 16 |
| Nitro RX Data | auto | auto | 1 |
| Nitro TX Data | auto | auto | 3 |
| Nitro Control Line | auto | auto | 1 |
- tRCDWR: if the board has no tRCDWR, use tRCDRD only.
- Multi-rank-only timings and tREFI 65535 fan note same as above.
Profiles · what “fallback / easy / BZ lazy” mean
- fallback Starting point mainly for kits that struggle with tighter presets.
- “easy” Expected to work in almost all typical setups.
- BZ lazy Daily-driver style profile the author would try first.
Glossary · clocks & voltage
Ratio
- Ratio of DRAM + PHY clock to memory controller clock (UCLK : MCLK).
UCLK
- Memory controller clock trades latency vs bandwidth.
MCLK
- DRAM + PHY clock trades latency vs bandwidth.
FCLK
- Infinity Fabric clock latency vs bandwidth.
VSOC
- SoC voltage (about 0.9–1.3 V typical ceiling guidance in sheet context); strongly influences max UCLK. In 2:1, lower UCLK can allow very low VSOC.
DRAM VDD
- DRAM “core” voltage (about 1.35–1.75 V range mentioned); high VDD (~1.5 V+) often aimed at tight tCL (e.g. 8000 C34 / 6400 C26). Beyond ~1.65 V can hurt stability.
DRAM VDDQ
- DRAM I/O voltage signaling RAM ↔ CPU (about 1.1–1.65 V); avoid going over ~1.65 V. Sweet spot varies by board, RAM, BIOS often ~1.25–1.45 V.
VDDIO
- PHY I/O voltage signaling CPU ↔ RAM (about 1.1–1.5 V, ~1.5 V max cited). Typical tuning band ~1.25–1.5 V, board/RAM dependent.
VDDP
- PHY voltage (about 0.95–1.15 V, ~1.15 V max). Too low or too high loses stability.
Glossary · timing parameters
tCL
- READ → first data burst; lowers read/write latency.
tRCDWR
- ACT → WRITE; row open delay before WRITE lowers write latency; can be very short because writes overwrite the row.
tRCDRD
- ACT → READ; row open delay before READ lowers read latency.
tRP
- PRE → ACT same bank how soon another row opens in the bank (faster row changes).
tRAS
- ACT → PRE same bank how soon you close after opening (mostly matters when the MC opens then immediately closes).
tRC
- ACT → ACT same bank how fast you switch active rows (same “immediate hop” caveat).
tWR
- WRITE → PRE same bank how soon you close after WRITE.
tRFC
- Refresh duration idle window after REF before other commands; higher tRFC / tREFI fraction means more cycles “lost” to refresh.
tRFC2 / tRFCSB
- Unused in these presets.
tREFI
- Interval between REF commands higher tREFI frees more bandwidth but needs colder DRAM (often < ~55 °C for very high values like 65535).
tRTP
- READ → PRE how soon you close after READ.
tRRDL
- ACT → ACT same bank group going below 8 usually does little because DDR5 burst is 8 cycles.
tRRDS
- ACT → ACT different bank group same note about < 8.
tFAW
- Four-ACT window backs off a 5th ACT if four ACTs happened too fast.
tWTRL / tWTRS
- WRITE → READ (same BG vs different BG) bandwidth vs turnaround.
tRDRDSCL / tRDRDSC
- READ → READ (same BG vs different BG) bandwidth; tRDRDSC > 1 hurts bandwidth badly.
tRDRDSD / tRDRDDD
- READ → READ across ranks (same DIMM vs different DIMMs) bandwidth.
tWRWRSCL / tWRWRSC
- WRITE → WRITE (same BG vs different BG) bandwidth; tWRWRSC > 1 hurts badly.
tWRWRSD / tWRWRDD
- WRITE → WRITE across ranks (same DIMM vs different DIMMs) bandwidth.
tWRRD
- WRITE → READ across ranks bandwidth.
tRDWR
- READ → WRITE (general turnaround).
Work in progress
Cross-check against your motherboard BIOS naming and the PDF revisions above before flashing tunings “blind”.